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Grant-Jacob, James A.; Beecher, Stephen J.; Riris, Haris; Yu, Anthony W.; Shepherd, David P.; Eason, Best Vapor Robert W.; Mackenzie, Jacob I. (23 October 2017). "Dynamic control of refractive index throughout pulsed-laser-deposited waveguide development". Grant-Jacob, James A.; Beecher, Stephen J.; Prentice, Jake J.; Shepherd, David P.; Mackenzie, Jacob I.; Eason, Robert W. (June 2018). "Pulsed laser deposition of crystalline garnet waveguides at a growth price of 20 μm per hour".

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(2017-05-01). "Ytterbium-doped-garnet crystal waveguide lasers grown by pulsed laser deposition". Grant-Jacob, James A.; Beecher, Stephen J.; Parsonage, Tina L.; Hua, Ping; Mackenzie, Jacob I.; Shepherd, David P.; Eason, Robert W. (2016-01-01). "An 115 W Yb:YAG planar waveguide laser fabricated by way of pulsed laser deposition" (PDF). Shen, J.; Gai, Zheng; Kirschner, J. (February 2004). "Growth and magnetism of metallic thin movies and multilayers by pulsed-laser deposition".

Yang, W; Araki H; Kohyama A; Thaveethavorn S; Suzuki H; Noda T (2004). "Fabrication in-situ SiC nanowires/SiC matrix composite by chemical vapor infiltration course of". It has been demonstrated that the opening concentrations can be adjusted between 1014 and 1021 cm−3 by just adjusting the alkyl beam strain and the TMGa/TEGa ratio, providing means for attaining excessive and controllable p-kind doping of GaAs.

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Tsang, W.T. (1989). "From chemical vapor epitaxy to chemical beam epitaxy". Tsang, W.T. (1987). "Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure gadgets". Chemical beam epitaxy was first demonstrated by W.T. Within the electron-beam methodology, the supply is heated by an electron beam with an vitality as much as 15 keV. Selective development is hard to realize using elemental source MBE as a result of group III atoms do not desorb readily after they are adsorbed.