On DDR3 and DDR4 DIMM Modules
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작성자 Lila 작성일 25-08-17 23:05 조회 7 댓글 0본문
Memory Wave timings or RAM timings describe the timing info of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to completely execute commands. Executing commands too shortly will end in knowledge corruption and leads to system instability. With appropriate time between commands, memory modules/chips may be given the chance to fully switch transistors, charge capacitors and appropriately sign back info to the memory controller. As a result of system performance will depend on how briskly memory can be utilized, this timing instantly affects the efficiency of the system. The timing of trendy synchronous dynamic random-entry memory (SDRAM) is usually indicated utilizing four parameters: CL, TRCD, TRP, and TRAS in items of clock cycles; they are commonly written as 4 numbers separated with hyphens, e.g. 7-8-8-24. The fourth (tRAS) is usually omitted, or a fifth, the Command rate, typically added (usually 2T or 1T, additionally written 2N, 1N or CR2).
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